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april 2014 docid025190 rev 2 1 / 14 this is information on a product in full production. www.st.com STP90N6F6 n - channel 60 v, 0.0059 typ., 84 a stripfet? vi deepgate? power mosfet in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STP90N6F6 60 v 0.0068 84 a 136 w ? r ds(on) * q g industry benchmark ? extremely low on - resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses ? very low switching gate charge applications ? switching applications description this device is an n - channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. table 1: device summary order code marking p ackage packaging STP90N6F6 90n6f6 to - 220 tube
contents STP90N6F6 2 / 14 docid025190 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................. 10 4.1 to - 220 type a mechanical data ................................ ...................... 11 5 revision history ................................ ................................ ............ 13
STP90N6F6 electrical ratings docid025190 rev 2 3 / 14 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 60 v v ds drain - source voltage 20 v i d drain current (continuous) at t c = 25 c 84 a i d drain current (continuous) at t c = 100 c 55 a i dm (1) drain current (pulsed) 336 a p tot total dissipation at t c = 25 c 136 w t j operating junction temperature - 55 to 175 c t stg storage temperature - 55 to 175 c notes: (1) pulse width is limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - c thermal resistance junction - case 1.1 c/w r thj - a thermal resistance junction - ambient 62.5 table 4: avalanche characteristics symbol parameter value unit i av avalanche current, repetitive or not - repetitive (pulse width limited by maximum junction temperature) 38.5 a e as single pulse avalanche energy (t j = 25 c, i d = i av , v dd = 43 v) 152 mj
electrical characteristics STP90N6F6 4 / 14 docid025190 rev 2 2 electrical characteristics (t j = 25 c unless otherwise specified) table 5: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current v ds = 60 v, v gs = 0 10 a v ds = 60 v, v gs = 0, t j =125 c 100 a i gss gate - body leakage current v gs = 20 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 38.5 a 0.0059 0.0068 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 4295 - pf c oss output capacitance - 292 - pf c rss reverse transfer capacitance - 190 - pf q g total gate charge v dd = 30 v, i d = 84 a, v gs = 10 v - 74.9 - nc q gs gate - source charge - 19 - nc q gd gate - drain charge - 18.3 - nc r g intrinsic gate resistance f = 1 mhz open drain - 2.2 - table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 77 a r g = 4.7 , v gs = 10 v - 22 - ns t r rise time - 42 - ns t d(off) turn - off - delay time - 73 - ns t f fall time - 16 - ns
STP90N6F6 electrical characteristics docid025190 rev 2 5 / 14 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 77 a i sdm (1) source - drain current (pulsed) - 308 a v sd (2) forward on voltage i sd = 77 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 77 a, v dd = 48 v di/dt = 100 a/s, t j = 25 c - 49 ns q rr reverse recovery charge - 8.5 nc i rrm reverse recovery current - 0.3 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STP90N6F6 6 / 14 docid025190 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : ou tput characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance r ds(on) 4.0 2.0 0.0 15 25 i d (a) (m ) 20 30 6.0 v gs =10v 35 40 8.0 10.0 12.0 45 50 gipg1803201414 1 1s a i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 10ms 1ms 0.01 tj=175c t c=25c single pulse 100 gipg180320141025s a v gs 6 4 2 0 0 40 q g (nc) (v) 8 60 80 10 v dd =30v i d =84 a 12 20 gipg180320141408s a single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -1 10 -5 10 -2 10 -2 10 -1 10 0 gipg18032014 1 129s a
STP90N6F6 ele ctrical characteristics docid025190 rev 2 7 / 14 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : norma lized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics v (br)dss t j (c) (norm) 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 i d =250 a -55 -5 -30 70 20 45 95 120 gipg180320141610s a
test circuits STP90N6F6 8 / 14 docid025190 rev 2 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit am01471v1 v i p w v d i d d.u. t . l 2200 m f 3.3 m f v dd am01468v1 v gs p w v d r g r l d.u. t . 2200 m f 3.3 m f v dd am01470v1 a d d.u. t . s b g 25 w a a b b r g g f as t diode d s l=100 m h m f 3.3 1000 m f v dd
STP90N6F6 test circuits docid025190 rev 2 9 / 14 figure 17 : unclamped inductive waveform figure 18 : switching time waveform
package mechanical data STP90N6F6 10 / 14 docid025190 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance . ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
STP90N6F6 package mechanical data docid025190 rev 2 11 / 14 4.1 to - 220 type a mechanical data fi gure 19 : to - 220 type a drawings
package mechanical data STP90N6F6 12 / 14 docid025190 rev 2 table 9: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
STP90N6F6 revision history docid025190 rev 2 13 / 14 5 revision history table 10: document revision history date revision changes 03 - sep - 2013 1 initial release. 03 - apr - 2014 2 document status promoted from preliminary to production data. added new section curves. minor text changes.
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